By B.L. Theraja, R. S. Sedha
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Extra info for A Textbook of Electrical Technology Volume IV - Electronic Devices and Circuits
6 × 10 Coulomb . −19 Assuring single carrier conduction, find the mobility and density of charge carriers. 6 × 10 Coulomb. C. Engg. Services 1994) Consider an intrinsic Ge bar with material time constant of 100 µsec across a cross-section of 1mm2 and length 1 cm. One side of the bar is illuminated with 1015 photons/sec. Assume that each incident photon generate one electron hole pair and these are uniformly distributed throughout the bar. Find the bar resistance under constant excitation at room temperature.
29 and 34. 6 × 10−19 ∴ VB = 26 loge (N aN d / ni ) mV Barrier voltage depends on doping density, electronic charge and temperature. For a given junction, the first two factors are constant, thus making V B dependent on temperature. With increase in temperature, more minority charge carriers are produced, leading to their increased drift across the junction. As a result, equilibrium occurs at a lower barrier potential. It is found that both for Ge and Si, V B decreases by about 2 mV / ºC. where ∆ t is the rise in temperature in ºC.
This field begins to prevent additional electrons from arriving there. Force exerted by this field on the electrons is eEH. Equilibrium is established when the two oppositely-directed magnetic and electric forces acting on the electron become equal in magnitude. e. e. along N M. e. (i) Also ve = µ e EL ∴ Bµ e EL = EH or µ e B = EH/EL Hence, knowing EL and B and measuring EH, we can find electron mobility. Now, current density J = I/A = neve A /A = neve Substituting the value of υe from (i) above, we get J = neEH / B or n = JB / eEH This equation may be used to find electron density.